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開講学期 Course Start |
2014年度 後期 |
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授業区分 Regular or Intensive |
週間授業 |
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対象学科 Department |
情報電子工学系専攻 |
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対象学年 Year |
1 |
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必修・選択 Mandatory or Elective |
選択 |
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授業方法 Lecture or Seminar |
講義 |
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授業科目名 Course Title |
プラズマ工学特論 |
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授業科目名(英語) Course Title |
[授業科目名(英語)] |
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単位数 Number of Credits |
2 |
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担当教員 Lecturer |
植杉克弘 (Katsuhiro Uesugi) |
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教員室番号 Office |
Ｙ701 |
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連絡先(Tel) Telephone |
0143-46-5546 |
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連絡先(E-mail) |
uesugi＠mmm.muroran-it.ac.jp |
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オフィスアワー Office Hour |
Monday, Tuesday 12:00-13:00 |
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授業のねらい Learning Objectives |
プラズマプロセスは電子機器で用いられている集積回路を作製ために必要不可欠な技術である．この授業では，化学的に高い反応性をもつプラズマ放電の基本的な原理と，そのマイクロエレクトロニクスへの応用について学ぶ． Plasma processes are indispensable for manufacturing the integrated circuits used by the electronic equipment. This course will provide the fundamental principles of chemical reactive plasma discharges and applications in microelectronics. The fundamental physical and chemical properties of plasma and thin-film processing such as surface etching and deposition will be studied. |
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到達度目標 Outcomes Measured By: |
Understandings of fundamental principles of partially ionized plasma discharges, typical plasma sources used by the electronics industry, and applications in microelectronics. |
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授業計画 Course Schedule |
Total number of class hours: 22.5 h Course plan: 1. Introduction 2. Plasma fundamentals 3-5. Basic plasma equations and equilibrium 6-8. Atomic collisions 9-10. Plasma dynamics 11-12. Etching 13-14. Deposition and implantation 15. Applications in Microelectronics |
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教科書 Required Text |
No text book. Relevant materials will be provided. |
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参考書 Required Materials |
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成績評価方法 Grading Guidelines |
The score of each student is evaluated by presentations (50%) and reports (50%). A grade of more than 60 is accepted for a credit. |
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履修上の注意 Please Note |
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教員メッセージ Message from Lecturer |
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学習・教育目標との対応 Learning and Educational Policy |
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関連科目 Associated Courses |
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備考 Remarks |
This subject will be taught in Japanese and partially in English. |