開講学期 Course Start |
2013年度 後期 |
授業区分 Regular or Intensive |
週間授業 |
対象学科 Department |
情報電子工学系専攻 |
対象学年 Year |
1 |
必修・選択 Mandatory or Elective |
選択 |
授業方法 Lecture or Seminar |
講義および演習 |
授業科目名 Course Title |
プラズマエレクトロニクス特論 |
単位数 Number of Credits |
2 |
担当教員 Lecturer |
植杉克弘 |
教員室番号 Office |
Y701 |
連絡先(Tel) Telephone |
0143-46-5546 |
連絡先(E-mail) |
uesugi@mmm.muroran-it.ac.jp |
オフィスアワー Office Hour |
Monday 12:00-13:00, Thursday 12:00-13:00. |
授業のねらい Learning Objectives |
Plasma processes are indispensable for manufacturing the integrated circuits used by the electronic equipment. This course will provide the fundamental principles of chemical reactive plasma discharges and applications in microelectronics. The fundamental physical and chemical properties of plasma and thin-film processing such as surface etching and deposition will be studied. |
到達度目標 Outcomes Measured By: |
Understandings of fundamental principles of partially ionized plasma discharges, typical plasma sources used by the electronics industry, and applications in microelectronics. |
授業計画 Course Schedule |
Total number of class hours: 24 h Course plan: 1. Introduction 2. Materials processing 3. Plasma Fundamentals 4. Radio Frequency diodes 5. High-density sources 6. Basic plasma equations 7. Equilibrium properties 8. Atomic collisions 9. Plasma dynamics 10. Plasma etching 11. Etching kinetics 12. Etching of Silicon 13. Plasma-enhanced chemical vapor deposition 14. Plasma-immersion ion implantation 15. Applications in Microelectronics 16. Examination |
教科書 Required Text |
No text book. Relevant materials will be provided. |
参考書 Required Materials |
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教科書・参考書に関する備考 | |
成績評価方法 Grading Guidelines |
The score of each student is evaluated by presentations (50%) and examination (50%). |
履修上の注意 Please Note |
A grade of more than 60 is accepted for a credit. |
教員メッセージ Message from Lecturer |
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学習・教育目標との対応 Learning and Educational Policy |
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関連科目 Associated Courses |
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備考 Remarks |
This subject will be taught in Japanese and partially in English. |